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| BAR81 Silicon RF Switching Diodes Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR81 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking BBs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 30 100 150 -55 ... 125 -55 ... 150 Unit V mA C Operating temperature range Storage temperature 1 Aug-21-2001 BAR81 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA VF 0.93 1 IR 20 typ. max. Unit nA V AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls 0.15 rf CT 0.6 0.57 0.7 pF Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 2 Aug-21-2001 nH |
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